RF performance of deep-recessed N-Polar GaN MIS-HEMTs using a selective etch technology without Ex Situ surface passivation

IEEE Electron Device Letters

Volumn 32, Issue 2, 2011, Pages 134-136

  Kolluri, Seshadri ^a   Brown, David F ^b   Wong, Man Hoi ^a   Dasgupta, S ^a   Keller, Stacia ^a   Denbaars, Steven P ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

Deep recessed; GaN; high electron mobility transistor (HEMT); N polar

Indexed keywords

ALGAN; ALGAN/GAN; CONTINUOUS WAVES; DEEP RECESSED; DRAIN BIAS; ETCH DEPTH; EX SITU; GAIN CUTOFF FREQUENCY; GAN; GAN CAP; GATE LENGTH; GATE RECESS; GATE STRUCTURE; LARGE-SIGNALS; MIS-HEMT; N-POLAR; POWER GAINS; POWER-ADDED EFFICIENCY; RF DISPERSION; RF PERFORMANCE; SELECTIVE ETCH; SURFACE PASSIVATION;

CUTOFF FREQUENCY; DC POWER TRANSMISSION; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; PASSIVATION; PLASMA ETCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79151469864     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2090410     Document Type: Article

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