Selective dry etching of GaN over AlGaN in BCL3/SF6 mixtures

International Journal of High Speed Electronics and Systems

Volumn 14, Issue 3, 2004, Pages 756-761

  Buttari, D ^a   Chini, A ^a   Chakraborty, A ^a   McCarthy, L ^a   Xing, H ^a   Palacios, T ^a   Shen, L ^a   Keller, S ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CATALYST SELECTIVITY; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; INTERFEROMETRY; MIXTURES; SURFACE ROUGHNESS; SURFACE STRUCTURE;

LASER INTERFEROMETRY; PROCESS SELECTIVITY; ROOT MEAN SQUARE (RMS);

GALLIUM NITRIDE;

EID: 24144491360     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S012915640400279X     Document Type: Conference Paper

References (9)

1. J. Vatus, J. Chevrier, P. Delescluse, J. F. Rocheette, IEEE Transactions on Electron Devices, 33 (7), 934 (1986).
2. Yanjun Han, Song Xue, Wenping Guo, Yi Luo, Zhibiao Hao, Changzheng Sun, Japanese Journal of Applied Physics Part 2-Letters, 42 (10A), L1139 (2003).
3. Wen-Kai Wang, Yu-Jen Li, Cheng-Kuo Lin, Yi-Jen Chan, Guan-Ting Chen, Jen-Inn Chyi, IEEE Electron Device Letters, 25 (2), 52 (2004).
4. D. Buttari, A. Chini, T. Palacios, R. Coffie, L. Shen, H. Xing, S. Heikman, L. McCarthy, A. Chakraborty, S. Keller, and U.K. Mishra, Applied Physics Letters, 83 (23), 4779 (2003).
5. Chang Seok Oh, Tai Hong Kim, Kee Young Lim and Jeon Wook Yang, Semicond. Sci. Technol., 19, 172 (2004).
6. S. Salimian and C.B. Cooper III, J. Vac. Sci. Technol. B, 6 (6), 1641 (1988).
7. S. Salimian, C.B. Cooper III, R. Norton, and J. Bacon, Appl. Phys. Lett., 51 (14), 1083 (1987).
8. R. Cheung, R. J. Reeves, B. Rong, S. A. Brown, E. J. M. Fakkeldij, E. van der Drift, M. Kamp, J. Vac. Sci. Technol. B, 17 (6), 2759 (1999).
9. B. Rong, R. Cheung, W. Gao and M. Kamp, Microelectronic Engineering, 53, 419 (2000).