Molecular dynamics simulations of the sputtering process of silicon and the homoepitaxial growth of a Si coating on silicon

Computational Materials Science

Volumn 50, Issue 4, 2011, Pages 1320-1325

  Prskalo, A P ^a   Schmauder, S ^a   Ziebert, C ^b   Ye, J ^b   Ulrich, S ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

Coating; Film growth; Molecular dynamics; Silicon; Sputtering

Indexed keywords

AR ATOM; COATING PROCESS; COMMERCIAL SOFTWARE; ETCH DEPTH; EXPERIMENTAL VALUES; FUJITSU; HOMOEPITAXIAL GROWTH; IMPACT ENERGY; INPUT PARAMETER; ION ETCHING; LOW-ENERGY RANGE; MICROWAVE PLASMA; MOLECULAR DYNAMICS SIMULATIONS; PHYSICAL PARAMETERS; SI ATOMS; SI(0 0 1) SURFACE; SILICON SUBSTRATES; SIMULATION RESULT; SPUTTER PROCESS; SPUTTER YIELDS; SPUTTERING PROCESS; TERSOFF POTENTIAL; VACANCY MIGRATION;

ARGON; BINDING ENERGY; COATINGS; CRYSTAL ORIENTATION; DYNAMICS; EXPERIMENTS; MOLECULAR DYNAMICS; SILICON; SPUTTERING;

FILM GROWTH;

EID: 79151469667     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2010.08.006     Document Type: Conference Paper

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