Molecular dynamics simulations of the sputtering of SiC and Si3N4

Surface and Coatings Technology

Volumn 204, Issue 12-13, 2010, Pages 2081-2084

  Prskalo, A P ^a   Schmauder, S ^a   Ziebert, C ^b   Ye, J ^b   Ulrich, S ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

Magnetron sputtering; Molecular dynamics simulation; Silicon carbide; Silicon nitride; Sputter yield

Indexed keywords

AR ATOM; LITERATURE DATA; LOW-ENERGY RANGE; MD SIMULATION; MOLECULAR DYNAMICS SIMULATION; MOLECULAR DYNAMICS SIMULATIONS; SPUTTER PROCESS; SPUTTER YIELD; SPUTTER YIELDS; SPUTTERED SPECIES;

CRYSTAL ORIENTATION; DYNAMICS; MAGNETRONS; MOLECULAR DYNAMICS; MOLECULAR MECHANICS; SILICON CARBIDE; SILICON NITRIDE;

SPUTTERING;

EID: 76349125328     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2009.09.043     Document Type: Article

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