Room-temperature resistance switching and temperature hysteresis of Pr 0.7Ca 0.3MnO 3 junctions

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Sakai, Joe ^a   Imai, Syozo ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DEPENDENCE; RESISTANCE MEMORY EFFECT; ROOM TEMPERATURE; THERMAL HYSTERESIS;

COOLING; CURRENT VOLTAGE CHARACTERISTICS; DATA STORAGE EQUIPMENT; DEPOSITION; HYSTERESIS; MIM DEVICES; PRASEODYMIUM COMPOUNDS;

SEMICONDUCTOR JUNCTIONS;

EID: 20944441821     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1851852     Document Type: Conference Paper

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