Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer

Solid-State Electronics

Volumn 56, Issue 1, 2011, Pages 168-174

  Muller, Ch ^a   Deleruyelle, D ^a   Muller R ^b   Thomas, M ^c   Demolliens, A ^c   Turquat, Ch ^c   Spiga, S ^d  

^a Institut Matériaux   (France)

^b IMEC   (Belgium)

^c UNIVERSITÉ DE TOULON   (France)

^d LABORATORIO MDM   (Italy)

Author keywords

Conductive AFM; CuTCNQ complex; Memory devices; Redox process; Resistive switching

Indexed keywords

AFM; CUTCNQ COMPLEX; MEMORY DEVICE; REDOX PROCESS; RESISTIVE SWITCHING;

ATOMIC FORCE MICROSCOPY; COPPER; COPPER COMPOUNDS; HAFNIUM COMPOUNDS; NANOSTRUCTURED MATERIALS; NANOWIRES; ORGANOMETALLICS; SWITCHING; SWITCHING SYSTEMS;

PROCESS CONTROL;

EID: 78751641945     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.10.006     Document Type: Article

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