From micrometric to nanometric scale switching of CuTCNQ-based non-volatile memory structures

Proceedings - 2008 9th Annual Non-Volatile Memory Technology Symposium, NVMTS 2008

Volumn , Issue , 2008, Pages

  Thomas, M ^a   Demolliens, A ^a   Turquat, Ch ^a   Deleruyelle, D ^b   Muller, Ch ^b   Kever, T ^c   Bottger U ^c   Waser, R ^c  

^a UNIVERSITÉ DE TOULON   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Bipolar switching; C AFM; CuTCNQ complex; Resistive switching memory

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONDUCTIVE FILMS; DATA STORAGE EQUIPMENT; ELECTRIC CURRENT MEASUREMENT; HETEROJUNCTIONS; SIZE DISTRIBUTION; SWITCHING; SWITCHING SYSTEMS; WINDOWS;

BIPOLAR SWITCHING; C-AFM; CHARGE STORAGE DEVICES; CURRENT MAPPINGS; CUTCNQ COMPLEX; ELECTRICAL TESTING; HIGH DENSITIES; LOCAL CURRENT MEASUREMENTS; LOW-RESISTANCE STATE; MEMORY STRUCTURES; MEMORY WINDOWS; NANO-METER SCALE; NANOMETRIC SCALE; NON-VOLATILE MEMORIES; PAD SIZES; POTENTIAL SCALING; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY; SPATIAL DISTRIBUTIONS; STORAGE MEDIAS; SWITCHING BEHAVIORS; SWITCHING REGIONS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 62349140797     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVMT.2008.4731190     Document Type: Conference Paper

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