Resistance switching of CuTCNQ nanowires developed for high-density memory devices

Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07

Volumn , Issue , 2007, Pages 45-48

  Turquat, Ch ^a   Demolliens, A ^a   Razafindramora, J ^a   Merlen, A ^a   Valmalette, J Ch ^a   Muller, Ch ^a   Muller R ^b   Goux, L ^b   Wouters, D J ^b  

^a UNIVERSITÉ DE TOULON   (France)

^b IMEC   (Belgium)

Author keywords

Metal organic bi stable material; Microstructure; Nanowires; Resistive switching memories; Switching mechanism

Indexed keywords

ALUMINUM COATINGS; COPPER; DIGITAL STORAGE; ELECTRIC VARIABLES MEASUREMENT; MICROSTRUCTURE; NANOWIRES; SWITCHING; TESTING;

ELECTRON TRANSMISSION MICROSCOPY; MEMORY APPLICATIONS; METAL-ORGANIC BI-STABLE MATERIAL; RESISTANCE SWITCHING; RESISTIVE SWITCHING MECHANISMS; RESISTIVE SWITCHING MEMORY; SWITCHING MECHANISM; TETRACYANOQUINODIMETHANE;

ORGANOMETALLICS;

EID: 48549105187     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/nvmt.2007.4389943     Document Type: Conference Paper

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