Contact effects in Cu(TCNQ) memory devices

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 3, 2008, Pages 647-655

  Hefczyc, Artur ^a   Beckmann, Lars ^a   Becker, Eike ^a   Johannes, Hans Hermann ^a   Kowalsky, Wolfgang ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BISTABLE; CONTACT AREAS; CONTACT EFFECTS; DEVICE CONFIGURATIONS; DEVICE STRUCTURES; ELECTRICAL CHARACTERISTICS; ELECTRICAL SWITCHING; MEMORY EFFECTS; METAL ELECTRODES; NOBLE METALS; ORGANIC MATERIALS; OXIDE INTERLAYERS; PLANAR DEVICES; STACKED CONFIGURATIONS; SWITCHING PROCESSES; SWITCHING PROPERTIES; THREE ELECTRODES; UNDERLYING MECHANISMS;

CLARIFICATION; COPPER; DATA STORAGE EQUIPMENT; ELECTRONIC PROPERTIES; METALS; OXYGEN; PRECIOUS METALS; PROBABILITY DENSITY FUNCTION; WORK FUNCTION;

SWITCHING;

EID: 54849438773     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200723418     Document Type: Article

References (16)

1. R. S. Potember, T. O. Poehler, and D. O. Cowan, Appl. Phys. Lett. 34, 405 (1979).
2. K. Sakai, H. Matsuda, H. Kawada, K. Eguchi, and T. Nakagiri, Appl. Phys. Lett. 53, 1274 (1988).
3. N. Watanabe, Y. Iwasa, and T. Koda, Phys. Rev. B 44, 11111 (1991).
4. H. J. Gao, Z. Q. Xue, K. Z. Wang, Q. D. Wu, and S. Pang, Appl. Phys. Lett. 68, 2192 (1996).
5. D. Tondelier, K. Lmimouni, D. Vuillaume, C. Fery, and G. Haas, Appl, Phys. Lett. 85, 5763 (2004).
6. M. Lauters, B. McCarthy, D. Sand, and G. E. Jabbour, Appl, Phys. Lett. 89, 013507 (2006).
7. E. I. Kamitsos, C. H. Tzinis, and W. M. Risen, Solid State Commun. 42, 561 (1982).
8. R. S. Potember, T. O. Poehler, and R. C. Benson, Appl. Phys. Lett. 41, 548 (1982).
9. T. Oyamada, H. Tanaka, K. Matsushige, H. Sasabe, and C. Adachi, Appl. Phys. Lett. 83, 1252 (2003).
10. T. Kever, U. Böttger, C. Schindler, and R. Waser, Appl. Phys. Lett. 91, 083506 (2007).
11. S. M. Sze, Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981), p, 251.
12. K. Xiao, I. N. Ivanov, A. A. Puretzky, Z. Liu, and D. B. Geohegan, Adv. Mater. 18, 2184 (2006).
13. S. Yamaguchi, C. A. Viands, and R. S. Potember, J. Vac. Sci. Technol. 9, 1129 (1991).
14. M. Cölle, M. Büchel, and D. M. de Leeuw, Org. Electron. 7, 305 (2006).
15. I. Emmer, Thin Solid Films 20, 43 (1974).
16. G. Dearnaley, A. M. Stoneham, and D. V. Morgan, Rep. Prog. Phys. 33, 1129 (1970).