In situ vacuum measurement of the thickness dependence of electron mobility in naphthalenetetracarboxylic diimide-based field-effect transistors

Applied Physics Letters

Volumn 98, Issue 2, 2011, Pages

  Liu, Shun Wei ^a   Lee, Chih Chien ^b   Wen, Je Min ^b   Chen, Chin Ti ^a  

^a INSTITUTE OF CHEMISTRY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIIMIDE; ELECTRICAL MEASUREMENT; FIELD-EFFECT MOBILITIES; GROWTH MECHANISMS; IN-SITU; N-CHANNEL; ORGANIC SEMICONDUCTOR; SATURATION THICKNESS; THICKNESS DEPENDENCE; UPRIGHT POSITION; VACUUM MEASUREMENTS;

ATOMIC FORCE MICROSCOPY; ELECTRON MOBILITY; MONOLAYERS; ORGANIC FIELD EFFECT TRANSISTORS; SEMICONDUCTOR GROWTH; SILICON COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 78751535319     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3534802     Document Type: Article

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