ZnSe films: preparation and properties

Vacuum

Volumn 46, Issue 11, 1995, Pages 1255-1260

  Pal, R ^a   Maiti, B ^a   Chaudhuri, S ^a   Pal, A K ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DEPOSITION; ELECTRON ENERGY LEVELS; EVAPORATION; FILM PREPARATION; GRAIN BOUNDARIES; GRAIN GROWTH; SEMICONDUCTING ZINC COMPOUNDS; SODIUM CHLORIDE; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EFFECTS;

GRAIN DISTRIBUTION; HOT WALL EVAPORATION; POTASSIUM CHLORIDE; TRAP STATE DENSITY; ZINC SELENIDE;

SEMICONDUCTING FILMS;

EID: 0029411886     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0042-207X(95)00009-7     Document Type: Article

References (37)

1. Optical Properties of ZnSe Epilayers and Films
2. Nitrogen-Doped ZnSe and ZnSSe Grown by Molecular Beam Epitaxy
3. Coherent Growth of ZnSe on GaAs by MOCVD
4. Effect of Charged Surfaces on the Optical Absorption Edge
5. Modification of the absorption edge due to grain boundaries and mechanical stresses in polycrystalline semiconductor films
6. Urbach rule in mixed single crystals of Zn_{x}Cd_{1-x}Se
7. Non-Local Elastic Interaction Energy between a Screw Dislocation and a Point Defect
8. Optical absorption edge and Urbach's rule in mixed single crystals of (GaxIn1−x)2Se3 in the indium rich region
9. Origin of donor and acceptor species in undoped ZnSe grown by low-pressure metalorganic chemical vapor deposition