Electrodeposition and characterization of undoped and nitrogen-doped ZnSe films

Materials Chemistry and Physics

Volumn 121, Issue 1-2, 2010, Pages 58-62

  Manzoli, A ^a,b   Eguiluz, K I B ^a,c   Salazar Banda, G R ^a,c   Machado, S A S ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b EMBRAPA CERRADOS   (Brazil)

^c TIRADENTES UNIVERSITY   (Brazil)

Author keywords

Doping effect; Electrochemical techniques; Microstructure; Semiconductors; Surface properties; Thin films

Indexed keywords

AMMONIUM SULFATE; APPLIED POTENTIALS; DEPOSITION SOLUTION; DOPING EFFECTS; ELECTROCHEMICAL TECHNIQUES; ELECTROLYTE INTERFACES; GRAZING INCIDENCE X-RAY DIFFRACTION; MOTT-SCHOTTKY; NITROGEN-DOPED; P-TYPE; SEMICONDUCTORS; VOLTAMMETRIC TECHNIQUES; ZN CONTENT; ZNSE FILMS;

AMMONIUM COMPOUNDS; ELECTROCHEMICAL PROPERTIES; ELECTRODEPOSITION; FLUORINE; GLASS CERAMICS; MICROSTRUCTURE; NITROGEN; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GLASS; SEMICONDUCTOR DOPING; SURFACE PROPERTIES; THIN FILMS; TIN; TITANIUM COMPOUNDS; TRACE ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC;

SEMICONDUCTING FILMS;

EID: 77949489287     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2009.12.038     Document Type: Article

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