Effect of annealing in N2 atmosphere on net acceptor concentration in ZnSe:N grown by MOCVD

Current Applied Physics

Volumn 4, Issue 6, 2004, Pages 630-632

  Oh, C B ^a   Wang, J F ^a   Isshiki, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Annealing effect; Hydrogen passivation; MOCVD; N H bonds; Nitrogen doping; ZnSe homoepitaxial layer

Indexed keywords

EID: 5144223381     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2004.01.036     Document Type: Article

References (11)

1. Wolk J.A. Ager J.W. III Duxstad K.J. Haller E.E. Taskar N.R. Dorman D.R. Olego D.J. Appl. Phys. Lett. 63 1993 2756
2. Kamata A. Mitsuhashi H. Fujita H. Appl. Phys. Lett. 63 1993 3353
3. Lim S.W. Honda T. Koyama F. Iga K. Inoue K. Yanashima K. Munekata H. Kukimoto H. Appl. Phys. Lett. 65 1994 2437
4. Hasse M.A. Qiu J. Depuydt J.M. Cheng H. Appl. Phys. Lett. 59 1991 1272
5. Gaines J.M. Drenten R.R. Haberern K.W. Marshall T. Mensz P. Petruzzello J. Appl. Phys. Lett. 62 1993 2462
6. Chevallier J. Mater. Sci. Forum 148-149 1994 219
7. Fujita Sz. Maruo S. Ishio H. Murawala P.A. Fujita Sg. J. Cryst. Growth 93 1991 644
8. Hauksson I.S. Simpson J. Wang S.Y. Prior K.A. Cavenett B.C. Appl. Phys. Lett. 61 1992 2208
9. Jiang X.J. Hisamung T. Nozue Y. Goto T. J. Phys. Soc. Jpn. 52 1983 4008
10. Kumagawa M. Sunami H. Terasaki T. Nishizawa J. Jpn. J. Appl. Phys. 7 1968 1332
11. Wang J.F. Masugata D. Oh C.B. Omino A. Seto S. Isshiki M. Phys. Stat. Sol. (a) 193 2002 251