Band gap engineering in PbS nanostructured thin films from near-infrared down to visible range by in situ Cd-doping

Journal of Alloys and Compounds

Volumn 495, Issue 1, 2010, Pages 234-237

  Thangavel, S ^a   Ganesan, S ^b   Chandramohan, S ^c   Sudhagar, P ^d   Kang, Yong Soo ^d   Hong, Chang Hee ^c  

^a MUTHAYAMMAL COLLEGE OF ARTS AND SCIENCE   (India)

^b GOVERNMENT COLLEGE OF TECHNOLOGY   (India)

^c Chonbuk National University   (South Korea)

^d Hanyang University   (South Korea)

Author keywords

Cd doping; Optical band gap; PbS thin films; Quantum confinement

Indexed keywords

BAND GAP ENGINEERING; BAND-GAP MODIFICATION; CD-DOPING; CHEMICAL-BATH DEPOSITION; DEPOSITION CONDITIONS; FACE CENTERED CUBIC STRUCTURE; IMPURITY CONCENTRATION; IN-SITU; NANOSTRUCTURED FILMS; NANOSTRUCTURED THIN FILM; NEAR INFRARED; PBS THIN FILMS; QUANTUM SIZE EFFECTS; SIZE CONFINEMENT; VISIBLE RANGE; WIDE SPECTRAL RANGE;

CRYSTALLITE SIZE; ENERGY GAP; FILM GROWTH; OPTICAL BAND GAPS; QUANTUM CONFINEMENT; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DOPING (ADDITIVES);

EID: 77949488830     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.01.135     Document Type: Article

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