Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 1, 2011, Pages 129-135

  Cantoro, M ^a,b   Wang, G ^a,b   Lin, H C ^a,b   Klekachev, A V ^a,b   Richard, O ^a   Bender, H ^a   Kim, T G ^a,b   Clemente, F ^a   Adelmann, C ^a   Van Der Veen, M H ^a   Brammertz, G ^a   Degroote, S ^a   Leys, M ^a   Caymax, M ^a   Heyns, M M ^a,b   De Gendt, S ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

electronic transport; III V semiconductors; InAs; MOVPE; nanowires; Raman spectroscopy

Indexed keywords

CATALYST-FREE; CMOS TECHNOLOGY; ELECTRICAL TRANSPORT PROPERTIES; ELECTRONIC TRANSPORT; GROWTH PROCESS; HETEROEPITAXY; II-IV SEMICONDUCTORS; INAS; METALORGANIC VAPOR PHASE EPITAXY; MOVPE; SI WAFER; VERTICALLY ALIGNED; VIBRATIONAL PROPERTIES;

CATALYSTS; CMOS INTEGRATED CIRCUITS; ELECTRIC PROPERTIES; ELECTRIC WIRE; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; INDIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; NANOWIRES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78651357404     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026396     Document Type: Article

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