Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy

Journal of Applied Physics

Volumn 104, Issue 10, 2008, Pages

  Begum, N ^a,b   Piccin, M ^a,c,d   Jabeen, F ^a,e   Bais, G ^a,d,e   Rubini, S ^a   Martelli, F ^a   Bhatti, A S ^b  

^a LABORATORIO TASC   (Italy)

^b Jauhar Campus ^*  (Pakistan)

^c UNIVERSITY OF TRIESTE   (Italy)

^d PARC TECHNOLOGIQUE DES FONTAINES   (France)

^e SINCROTRONE TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSIS; CRYSTAL GROWTH; DEFECT DENSITY; ELECTRIC WIRE; INDIUM ARSENIDE; MANGANESE; MANGANESE COMPOUNDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOWIRES; PHONONS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; WIRE;

BULK MATERIALS; CRYSTAL QUALITIES; ENERGY DOWNSHIFT; ENERGY POSITIONS; FREE REGIONS; HIGH HOMOGENEITIES; RAMAN STUDIES; SO PHONONS; STRUCTURAL CHARACTERIZATIONS; STRUCTURAL DEFECTS; SURFACE OPTICAL PHONONS; TO PHONONS;

GALLIUM ALLOYS;

EID: 57049095858     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3026726     Document Type: Article

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