Silicon nanowire pinch-off FET: Basic operation and analytical model

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Volumn , Issue , 2009, Pages 245-248

  Sorée, Bart ^a   Magnus, Wim ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EXPRESSIONS; ANALYTICAL MODEL; BASIC OPERATION; CHANNEL APPROXIMATION; NUMERICAL SOLUTION; PINCHOFF; POISSON SOLVERS; RADIAL DIRECTION; SILICON NANOWIRES; SUBTHRESHOLD SLOPE;

COMPUTER SIMULATION; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; MESFET DEVICES;

NANOWIRES;

EID: 67650662493     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2009.4897582     Document Type: Conference Paper

References (2)

1. Seonghoon Jin, Massimo V. Fischetti, and Ting-Wei Tang, J.Appl.Phys, 102, (2007), 083715
2. F. Chapeau-Blondeau, A. Monir, IEEE Trans. Signal Processing, 12, (2002), pp.2160-2165.