Barrier and seed layer coverage in 3D structures with different aspect ratios using sputtering and ALD processes

Microelectronic Engineering

Volumn 85, Issue 10, 2008, Pages 1947-1951

  Luhn O ^a,b   Van Hoof, C ^a,b   Ruythooren, W ^a   Celis, J P ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Barrier; High aspect ratio; Seed layer; Step coverage; Through Silicon Via

Indexed keywords

AGRICULTURAL PRODUCTS; ATOMIC LAYER DEPOSITION; CLADDING (COATING); COPPER; DIMENSIONAL STABILITY; ELECTROPLATING; FLUID MECHANICS; IMAGING TECHNIQUES; ION BOMBARDMENT; METALLIZING; OPTICAL MICROSCOPY; PLASMA DEPOSITION; PRESSURE DROP; PULSED LASER DEPOSITION; SEED; SPUTTER DEPOSITION; TECHNOLOGY;

3-D INTERCONNECT TECHNOLOGY; 3-D STRUCTURES; ATOMIC LAYER DEPOSITIONS; BARRIER; BARRIER LAYERS; COATING TECHNOLOGIES; CONDUCTIVE LAYERS; CONTINUOUS BARRIER; COPPER SEED; DEPOSITION TECHNOLOGIES; ELECTRICAL CONTINUITY; FOCUSED-ION BEAMS; HIGH ASPECT RATIO; LARGE RANGE; OPTICAL-; SEED LAYER; SEED LAYERS; SELF-IONIZED PLASMA; STEP COVERAGE; SURFACE LAYERING; THROUGH-SILICON-VIA;

ASPECT RATIO;

EID: 52149091436     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.06.007     Document Type: Article

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