The Impacts of dimensions and return current path geometry on coupling in single ended through silicon vias

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2009, Pages 1092-1097

  Curran, Brian ^a   Ndip, Ivan ^a   Guttovski, Stephan ^a   Reichl, Herbert ^a,b  

^a FRAUNHOFER IZM   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODEL; FULL-WAVE SIMULATIONS; LUMPED ELEMENT EQUIVALENT CIRCUIT; MICROELECTRONICS PACKAGING; NEAR END CROSS TALKS; RETURN CURRENT PATHS; SINGLE-ENDED; THROUGH SILICON VIAS;

INTERCONNECTION NETWORKS; MICROELECTRONICS;

CROSSTALK;

EID: 70349675199     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2009.5074148     Document Type: Conference Paper

References (10)

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