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Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 423-428

Effect of the nucleation layer deposition temperature on the nature of defects in GSMBE GaN films

(4) Vennegues P a Grandjean, N a Massies, J a Semond, F a

a CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; FILM GROWTH; MOLECULAR BEAM EPITAXY; NUCLEATION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTING FILMS;

EID: 0343620601 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)01367-0 Document Type: Article

Times cited : (9)

References (9)

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