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Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 326-329

GaN nanocolumns on sapphire by ammonia-MBE: From self-organized to site-controlled growth

(3) Vezian S a Alloing, B a Zuniga Perez J a

a CNRS (France)

Author keywords

Molecular beam epitaxy; Nanostructures; Nitrides; Sapphire; Semiconducting IIIV materials

Indexed keywords

CATALYST-FREE; DONOR-BOUND EXCITON; ENERGY POSITION; MICROPHOTOLUMINESCENCE; N-TYPE DOPING; NANO-COLUMNS; SAPPHIRE SUBSTRATES; SELF ORGANIZED GROWTH; SELF-ORGANIZED; SEMI CONDUCTING III-V MATERIALS;

AMMONIA; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SILICON NITRIDE; SUBSTRATES;

SAPPHIRE;

EID: 78651305826 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.160 Document Type: Article

Times cited : (10)

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