Low temperature photoluminescence and Raman phonon modes of Au-catalyzed MBE-grown GaAsAlGaAs coreshell nanowires grown on a pre-patterned Si (1 1 1) substrate

Journal of Crystal Growth

Volumn 314, Issue 1, 2011, Pages 268-273

  Bailon Somintac, Michelle F ^a   Ibaez, Jasher J ^a   Jaculbia, Rafael B ^a   Loberternos, Regine A ^a   Defensor, Michael J ^a   Salvador, Arnel A ^a   Somintac, Armando S ^a  

^a National Institute of Physics   (Philippines)

Author keywords

A1. Nanostructures; A1. Optical microscopy; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

A1. NANOSTRUCTURES; A1. OPTICAL MICROSCOPY; A3. MOLECULAR BEAM EPITAXY; AU-NANOPARTICLES; B2. SEMICONDUCTING GALLIUM ARSENIDE; BAND-GAP EMISSION; CORE-SHELL; CORE-SHELL NANOWIRES; EMISSION ENERGIES; FREE EXCITONS; GAAS; GAAS-ALGAAS; LATTICE DEFECTS; LOW TEMPERATURE PHOTOLUMINESCENCE; LOW TEMPERATURES; ORDER OF MAGNITUDE; PHOTOLUMINESCENCE EMISSION; RADIATIVE EFFICIENCY; RAMAN MODES; RAMAN PHONON MODES; RAMAN SCATTERING SPECTROSCOPY; SEMI-EMPIRICAL; SHAPE EFFECT; SI (1 1 1); TEMPERATURE DEPENDENCE; ZINC BLENDE;

ALUMINUM GALLIUM ARSENIDE; EPITAXIAL GROWTH; GALLIUM ALLOYS; GOLD; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; OPTICAL DATA STORAGE; OPTICAL INSTRUMENTS; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE;

GALLIUM ARSENIDE;

EID: 78651092911     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.152     Document Type: Article

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