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Volumn 31, Issue , 2008, Pages 23-26
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Raman scattering from GaAs nanowires grown by molecular beam epitaxy
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Author keywords
Nanowires; Phonon modes; Raman scattering
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Indexed keywords
ARCHITECTURAL ACOUSTICS;
CRYSTAL GROWTH;
ELECTRIC WIRE;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
GOLD ALLOYS;
MANGANESE;
MANGANESE COMPOUNDS;
MOLECULAR BEAMS;
MOLECULAR DYNAMICS;
MOLECULES;
NANOSTRUCTURES;
NANOWIRES;
PHOTONICS;
PIGMENTS;
RAMAN SCATTERING;
RAMAN SPECTROSCOPY;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR DEVICES;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR MATERIALS;
SEMICONDUCTOR QUANTUM WIRES;
SPECTRUM ANALYSIS;
SUBSTRATES;
TECHNOLOGY;
ADVANCED TECHNOLOGIES;
DIFFERENT SUBSTRATES;
EPITAXIAL GAAS;
INTERNATIONAL CONFERENCES;
MOLECULAR BEAM EPITAXY (MBE);
NANO SCALING;
NANO-STRUCTURED;
PHONON LINES;
POTENTIAL APPLICATIONS;
RAMAN SPECTRUM;
ROOM-TEMPERATURE (RT);
SELECTION RULES;
SELF-ASSEMBLED;
SELF-ASSEMBLED NANOWIRES;
SPINTRONIC DEVICES;
STRUCTURAL DEFECTS;
STRUCTURAL QUALITIES;
SUBSTRATE TEMPERATURE (ST);
MOLECULAR BEAM EPITAXY;
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EID: 45749137672
PISSN: 10226680
EISSN: None
Source Type: Book Series
DOI: 10.4028/0-87849-471-5.23 Document Type: Conference Paper |
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Times cited : (2)
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References (9)
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