Selective deposition of copper with iodine assisted growth of MOCVD on an MPTMS monolayer surface at a low temperature

Electronic Materials Letters

Volumn 6, Issue 4, 2010, Pages 209-213

  Rahman, Mohammad Arifur ^a   Park, Heejung ^a   Kim, Ara ^a   Lee, Chiyoung ^a   Lee, Jaegab ^a  

^a Kookmin University   (South Korea)

Author keywords

Copper; Iodine; MPTMS; Selective deposition

Indexed keywords

1-BUTENE; CU FILMS; GLASS SUBSTRATES; LONG INDUCTION PERIODS; LOW TEMPERATURES; LOW-TEMPERATURE DEPOSITION; LOW-TEMPERATURE PROCESS; MERCAPTOPROPYLTRIMETHOXYSILANE; MOCVD; MONOLAYER SURFACE; MPTMS; NUCLEATION AND GROWTH; PATTERNED SURFACE; SELECTIVE DEPOSITION;

BUTENES; DEPOSITION; FLEXIBLE ELECTRONICS; INDUSTRIAL CHEMICALS; IODINE; MONOLAYERS; NUCLEATION; SUBSTRATES;

COPPER;

EID: 78650972037     PISSN: 17388090     EISSN: None     Source Type: Journal    
DOI: 10.3365/eml.2010.12.209     Document Type: Article

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