Electrostatic energy profiles at nanometer-scale in group III nitride semiconductors using electron holography

Annalen der Physik (Leipzig)

Volumn 523, Issue 1-2, 2011, Pages 75-86

  Ponce, F A ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

2DEG; 2DHG; dislocations; Electron energy band profiles; electron holography; InGaN quantum wells; nitride semiconductors; piezoelectric fields

Indexed keywords

2DEG; 2DHG; DISLOCATIONS; ELECTRON ENERGY BAND; INGAN QUANTUM WELLS; NITRIDE SEMICONDUCTORS; PIEZO-ELECTRIC FIELDS;

BAND STRUCTURE; DISSOCIATION; ELECTRON BEAMS; ELECTRON HOLOGRAPHY; ELECTROSTATICS; NITRIDES; PIEZOELECTRICITY; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRONS;

EID: 78650956521     PISSN: 00033804     EISSN: 15213889     Source Type: Journal    
DOI: 10.1002/andp.201000112     Document Type: Article

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