Highly conductive modulation doped composition graded p -AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy

Journal of Applied Physics

Volumn 106, Issue 1, 2009, Pages

  Hertkorn, J ^a   Thapa, S B ^a   Wunderer, T ^a   Scholz, F ^a   Wu, Z H ^b   Wei, Q Y ^b   Ponce, F A ^b   Moram, M A ^c   Humphreys, C J ^c   Vierheilig, C ^d   Schwarz, U T ^d  

^a UNIVERSITY OF ULM   (Germany)

^b ARIZONA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/ALN/GAN; ALGAN/GAN; ALN; COMPOSITION-GRADED; CURRENT SPREADING; ELECTRICAL PROPERTY; FREE HOLE CONCENTRATION; FREEZE OUT; GAN LAYERS; HALL MEASUREMENTS; HIGH RESOLUTION X RAY DIFFRACTION; LATERAL CONDUCTIVITY; LOW TEMPERATURES; METAL-ORGANIC VAPOR PHASE EPITAXY; MODULATION-DOPED; SIMULATION RESULT; TWO-DIMENSIONAL HOLE GAS; VOLTAGE DROP; X-RAY REFLECTOMETRY;

CRYSTAL GROWTH; ELECTRIC POTENTIAL; ELECTRON HOLOGRAPHY; GALLIUM ALLOYS; GALLIUM NITRIDE; HOLE CONCENTRATION; HOLOGRAPHIC INTERFEROMETRY; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; MODULATION; PHYSICAL OPTICS; SEMICONDUCTING GALLIUM; VAPORS;

PHASE INTERFACES;

EID: 67650739418     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3160312     Document Type: Article

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