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Applied Physics Express

Volumn 2, Issue 12, 2009, Pages

Evidence of two-dimensional hole gas in p-type AlGaN/AlN/GaN heterostructures

(6) Wei, Qiyuan a Wu, Zhihao a Sun, Kewei a Ponce, Fernando A a Hertkorn, Joaquim b Scholz, Ferdinand b

a ARIZONA STATE UNIVERSITY (United States)

b UNIVERSITY OF ULM (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADJACENT CHANNELS; ALGAN LAYERS; ALGAN/ALN/GAN; ALGAN/GAN HETEROSTRUCTURES; CURRENT SPREADING; ELECTRONIC BAND STRUCTURE; ELECTROSTATIC POTENTIAL ENERGY; HETEROSTRUCTURES; HIGH SPATIAL RESOLUTION; HOLE TRANSFER; LASER DIODES; MODULATION-DOPED; P-TYPE; POTENTIAL BARRIERS; POTENTIAL PROFILES; TWO-DIMENSIONAL HOLE GAS; TWO-DIMENSIONAL HOLE GAS (2DHG);

CRYSTALS; ELECTRON HOLOGRAPHY; GALLIUM ALLOYS; GALLIUM NITRIDE; GASES; HETEROJUNCTIONS; IONIZATION OF GASES; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING GALLIUM COMPOUNDS; TWO DIMENSIONAL;

IONIZATION POTENTIAL;

EID: 73149090128 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.2.121001 Document Type: Article

Times cited : (16)

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