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Applied Physics Express

Volumn 3, Issue 12, 2010, Pages

High density two-dimensional hole gas induced by negative polarization at GaN/AlGaN heterointerface

(5) Nakajima, Akira a Sumida, Yasunobu a,b Dhyani, Mahesh H a Kawai, Hiroji a,b Narayanan, E M Sankara a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

b POWDEC K K (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HETERO INTERFACES; HETEROSTRUCTURES; HIGH DENSITY; LAYER STRUCTURES; METALORGANIC CHEMICAL VAPOR DEPOSITION; NEGATIVE POLARIZATION; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; THEORETICAL SIMULATION; TWO-DIMENSIONAL HOLE GAS; TWO-DIMENSIONAL HOLE GAS (2DHG);

CRYSTALS; ELECTRIC RESISTANCE; GALVANOMAGNETIC EFFECTS; GASES; HALL MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; POLARIZATION; TWO DIMENSIONAL;

HETEROJUNCTIONS;

EID: 78650853325 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.121004 Document Type: Article

Times cited : (101)

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