Magnesium diffusion profile in GaN grown by MOVPE

Journal of Crystal Growth

Volumn 310, Issue 14, 2008, Pages 3274-3277

  Benzarti, Z ^a   Halidou, I ^a   Bougrioua, Z ^b   Boufaden, T ^a   El Jani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b UNIV LILLE   (France)

Author keywords

A1. Diffusion; A1. SIMS; A3. MOVPE; B1. GaN; B1. Mg

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL STRUCTURE; DIFFUSION; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY;

FICK'S LAW; SUBSTITUTIONAL SITES; VARIABLE GROWTH TEMPERATURE;

MAGNESIUM;

EID: 44749089032     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.04.008     Document Type: Article

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