High temperature characteristics of ZnO-based MOS-FETs with a photochemical vapor deposition SiO2 gate dielectric

Journal of Physics and Chemistry of Solids

Volumn 72, Issue 2, 2011, Pages 147-149

  Young, S J ^a   Hsiao, C H ^b   Chang, S J ^b   Ji, L W ^a   Meen, T H ^a   Chen, T P ^b   Liu, K W ^b   Chen, K J ^b  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

A. Thin films; D. Electrical properties

Indexed keywords

A. THIN FILMS; ELECTRICAL PROPERTY; GATE LENGTH; GATE METALS; GATE-LEAKAGE CURRENT; HIGH QUALITY; HIGH TEMPERATURE CHARACTERISTICS; MAXIMUM TRANSCONDUCTANCE; MESFETS; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOSFETS; NORMAL OPERATIONS; ORDERS OF MAGNITUDE; PHOTO-CVD; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; ZNO;

ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MESFET DEVICES; MOSFET DEVICES; SILICON COMPOUNDS; THIN FILMS; ZINC OXIDE;

CHEMICAL VAPOR DEPOSITION;

EID: 78650779295     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2010.12.002     Document Type: Article

References (19)

1. S.J. Young, L.W. Ji, S.J. Chang, and Y.K. Su. J. Cryst. Growth 293 2006 43
2. S.J. Young, L.W. Ji, S.J. Chang, and X.L. Du. J. Electrochem. Soc. 154 2007 H26
3. S. Sasa, M. Ozaki, K. Koike, M. Yano, and M. Inoue. Appl. Phys. Lett. 89 2006 053502
4. C.J. Kao, Yong Wook Kwon, Y.W. Heo, D.P. Norton, and S.J. Pearton. J. Vac. Sci. Technol. B 23 2005 1024
5. J. Nishii, A. Ohtomo, K. Ohtani, H. Ohno, and M. Kawasaki Jpn. J. Appl. Phys. 44 2005 L1193
6. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono Science 300 2003 1269
7. R.L. Hoffman, B.J. Norris, and J.F. Wager. Appl. Phys. Lett. 82 2003 733
8. E.M.C. Fortunato, P.M.C. Barquinba, A.C.M.B.G. Pimentel, A.M.F. Concalves, A.J.S. Marques, and R.F.P. Martins Appl. Phys. Lett. 85 2004 2541
9. C.J. Huang, and Y.K. Su. J. Appl. Phys. 67 1990 3350
10. S.J. Chang, Y.K. Su, F.S. Juang, C.T. Lin, D.C. Chang, and Y.T. Cherng IEEE J. Quantum Electron. 36 2000 583
11. C.T. Lin, Y.K. Su, S.J. Chang, H.T. Huang, S.M. Chang, and T.P. Sun IEEE Photon. Technol. Lett. 9 1997 232
12. C.T. Lin, Y.K. Su, H.T. Huang, S.J. Chang, G.S. Chen, and T.P. Sun IEEE Photon. Technol. Lett. 8 1996 676
13. U. Itoh, Y. Toyoshima, H. Onuki, N. Washida, and T. Ibuki. J Chem. Phys. 85 1986 4867
14. H. Okabe Photochemistry of Small Molecules 1978 Wiley New York
15. R. Therrien, G. Lucovsky, and R. Davis. Appl. Surf. Sci. 166 2000 513
16. Katsumi Maeda, Mitsuru Sato, Ikuo Niikura, and Tsuguo Fukuda Semicond. Sci. Technol. 20 2005 S49
17. H. Kato, M. Sano, K. Miyamoto, and T. Yao. Jpn. J. Appl. Phys. 42 2003 2241
18. Jung-Hui Tsai, Jeng-Shyan Chen, and Yu-Jui Chu Superlattices Microstructures 37 2005 9
19. C.H. Liu, C.K. Wang, S.J. Chang, and Y.K. Su Mater. Sci. Eng. B 110 2004 32