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Volumn 37, Issue 1, 2005, Pages 9-17

Design consideration of δ-doping channels for high-performance n +-GaAs/p+-InGaP/n-GaAs camel-gate field effect transistors

(3) Tsai, Jung Hui a Chen, Jeng Shyan a Chu, Yu Jui a

a NATIONAL KAOHSIUNG NORMAL UNIVERSITY (Taiwan)

Author keywords

doping channel; Camel gate; Field effect transistors; Gate voltage swing; N+ GaAs p+ InGaP n GaAs; Potential barrier height; Transconductance

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR METAL BOUNDARIES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

Δ-DOPING CHANNELS; CAMEL GATES; GATE VOLTAGE SWING; N+-GAAS/P+-INGAP/N-GAAS; POTENTIAL BARRIER HEIGHTS;

GATES (TRANSISTOR);

EID: 10644271553 PISSN: 07496036 EISSN: None Source Type: Journal
DOI: 10.1016/j.spmi.2004.06.002 Document Type: Article

Times cited : (3)

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