Effects of passivation and extraction surface trap density on the 1/f noise of HgCdTe photoconductive detector

IEEE Photonics Technology Letters

Volumn 9, Issue 2, 1997, Pages 232-234

  Lin, C T ^b   Su, Y K ^a,b   Chang, S J ^b   Huang, H T ^b   Chang, S M ^b   Sun, T P ^c  

^a IEEE

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Generation recombination noise; Photoconductor; Surface trap density

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; INTEGRATION; MERCURY COMPOUNDS; OPTICAL MULTILAYERS; PASSIVATION; PHOTOCONDUCTIVITY; SIGNAL NOISE MEASUREMENT;

RECOMBINATION NOISE; SURFACE TRAP DENSITY;

INFRARED DETECTORS;

EID: 0031076161     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.553102     Document Type: Article

References (6)

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