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Volumn 36, Issue 5, 2000, Pages 583-589

Photo-Enhanced Native Oxidation Process for Hg0.8Cd0.2Te Photoconductors

Author keywords

CVD; Mercury compounds; Noise measurement; Oxidation; Passivation; Photoconducting devices; Photodetectors

Indexed keywords


EID: 0001505858     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.842100     Document Type: Article
Times cited : (16)

References (14)
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    • Nemirovsky, Y.1    Bahir, G.2
  • 3
    • 0028550707 scopus 로고
    • Electrical properties of epitaxially grown CdTe passivation for long-wavelength HgCdTe photodiodes
    • G. Bahir, V. Ariel, V. Garber, D. Rosenfeld, and A. Shei, "Electrical properties of epitaxially grown CdTe passivation for long-wavelength HgCdTe photodiodes," Appl. Phys. Lett., vol. 65, no. 21, pp. 2725-2727, 1994.
    • (1994) Appl. Phys. Lett. , vol.65 , Issue.21 , pp. 2725-2727
    • Bahir, G.1    Ariel, V.2    Garber, V.3    Rosenfeld, D.4    Shei, A.5
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    • Passivation with II-VI compounds
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    • Nemirovskv, Y.1
  • 7
    • 0030150117 scopus 로고    scopus 로고
    • Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes
    • C. T. Lin, Y. K. Su, H. T. Huang, S. J. Chang, C. S. Chen, T. P. Sun, and J. J. Luo, "Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes," IEEE Photon. Technol. Lett., vol. 8, pp. 676-678, 1996.
    • (1996) IEEE Photon. Technol. Lett. , vol.8 , pp. 676-678
    • Lin, C.T.1    Su, Y.K.2    Huang, H.T.3    Chang, S.J.4    Chen, C.S.5    Sun, T.P.6    Luo, J.J.7
  • 8
    • 0030078910 scopus 로고    scopus 로고
    • Electrical properties of high-quality stacked CdTe/photo-enhanced native cxide for HgCdTe passivation
    • Y. K. Su, C. T. Lin, H. T. Huang, S. J. Chang, T. P. Sun, G. S. Chen, and J. J. Luo, "Electrical properties of high-quality stacked CdTe/photo-enhanced native cxide for HgCdTe passivation," Jpn. J. Appl. Phys., vol. 35, no. 2B, pp. 107-109, 1996.
    • (1996) Jpn. J. Appl. Phys. , vol.35 , Issue.2 B , pp. 107-109
    • Su, Y.K.1    Lin, C.T.2    Huang, H.T.3    Chang, S.J.4    Sun, T.P.5    Chen, G.S.6    Luo, J.J.7
  • 10
    • 84950834572 scopus 로고
    • Surface recombination velocity of anodic sulfide and ZnS coated p-HgCdTe
    • E. Finkman and S. E. Schacham, "Surface recombination velocity of anodic sulfide and ZnS coated p-HgCdTe," J. Vac. Sci. Technol., vol. A7, no. 2, pp. 464-468, 1989.
    • (1989) J. Vac. Sci. Technol. , vol.A7 , Issue.2 , pp. 464-468
    • Finkman, E.1    Schacham, S.E.2
  • 11
    • 0345782366 scopus 로고
    • R. K. Willardson and A. C. Beer, Eds, New York: Academic, ch. 6
    • R. M. Broudy and V. J. Mazurczyk, Semiconductors and Semimetals, R. K. Willardson and A. C. Beer, Eds, New York: Academic, 1981. vol. 18, ch. 6, pp. 164-195.
    • (1981) Semiconductors and Semimetals , vol.18 , pp. 164-195
    • Broudy, R.M.1    Mazurczyk, V.J.2
  • 13


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.