Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 97, Issue 25, 2010, Pages

  Radtke, G ^a   Couillard, M ^b   Botton, G A ^b   Zhu, D ^c   Humphreys, C J ^c  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b MCMASTER UNIVERSITY   (Canada)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN THIN FILMS; AMORPHOUS INTERLAYERS; EPITAXIAL RELATIONS; HIGH-ANGLE ANNULAR DARK FIELDS; METAL-ORGANIC VAPOR PHASE EPITAXY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SI (1 1 1); SI SURFACES; SI(111) SUBSTRATE; SUBNANOMETERS;

ALUMINUM; AMORPHOUS SILICON; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; PHASE INTERFACES; SILICON NITRIDE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; VAPORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78650745415     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3527928     Document Type: Article

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