Chapter 2 Defect Identification Using Capacitance Spectroscopy

Semiconductors and Semimetals

Volumn 51, Issue PART B, 1999, Pages 93-152

  Mooney, P M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE SPECTROSCOPY; DEFECT IDENTIFICATION;

EID: 33744698063     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62975-0     Document Type: Article

References (137)

1. Achtziger N., Gottschalk H., Licht T., Meier J., and Rub M. Recoil implantation of radioactive transition metals and their investigation in silicon by deep-level transient spectroscopy. Appl. Phys. Lett. 66 (1995) 237-2312
2. 2 and Se-As pairs in silicon by elemental transmutation. Phys. Rev. Lett. 75 (1995) 4484-4487
3. Almbladh C.-O., and Rees G.J. Statistical mechanics or band states and impurity states in semiconductors. J. Phys. C: Solid Stute Phys. 14 (1981) 4575-4601
4. Asom M.T., Benton J.L., Sauer R., and Kimerling L.C. Interstitial defect reactions in silicon. Appl. Phys. Lett. 51 (1987) 256-258
5. Astrova E.V., Lebedev A.A., and Lebedev A.A. Influence of series resistance of a diode on transient capacitance measurements of deep-level parameters. Sov. Phys. Semicond. 19 (1985) 850-852
6. Auret F.D. Considerations for capacitance DLTS measurements using a lock-in amplifier. Rev. Sci. Instrum. 57 (1986) 1597-1603
7. Auret F.D., and Nel M. Single scan defect identification by deep level transient spectroscopy using a two-phase lock-in amplifier (IQ-DLTS). J. Appl. Phys. 63 (1988) 973-976
8. Auret F.D., Goodman S.A., and Meyer W.E. Electric-field-enhanced emission from radiation-induced hole traps in p-GaAs. Semicond. Sci. Technol. 10 (1995) 1376-1381
9. Baba T., Mizuta M., Fujisawa T., Yoshino J., and Kukimoto H. The local-environment-dependent DX centers: Evidence for the single energy level with a specified configuration. Jpn. J. Appl. Phys. 28 (1989) L891-L894
10. Baxandall P.J., Colliver D.J., and Fray A.F. An instrument for the rapid determination of semiconductor impurity profiles. J. Phys. E 4 (1971) 213-221
11. Benton J.L., and Kimerling L.C. Capacitance transient spectroscopy of trace contamination in silicon. J. Electrochem. Soc. 129 (1982) 2098-2102
12. Benton J.L., Asom M.T., Sauer R., and Kimerling L.C. Identification of interstitial carbon related defects in silicon. Mat. Res. Soc. Symp. Proc. 104 (1988) 85-91
13. Benton J.L. Metastable defect structures in elemental and compound semiconductors. J. Electron. Mater. 18 (1989) 199-206
14. Benton J.L. Characterization of defects in semiconductors by deep level transient spectroscopy. J. Crystal Growth 106 (1990) 116-126
15. Borsuk J.A., and Swanson R.M. Current transient spectroscopy: A high-sensitivity DLTS system. IEEE Trans. Electron Devices ED-27 (1980) 2217-2225
16. Borsuk J.A., and Swanson R.M. Capture-cross-section determination by transient-current trap-filling experiments. J. Appl. Phys. 52 (1981) 6704-6712
17. Bourgoin J., and Lannoo M. Point Defects in Semiconductors II: Experimental Aspects (1983), Springer-Verlag, Berlin
18. Broniatowski A., Blosse A., Srivastava P.C., and Bourgoin J.C. Transient capacitance measurements on resistive samples. J. Appl. Phys. 54 (1983) 2907-2910
19. Calleja E., Mooney P.M., Wright S.L., and Heiblum M. Origin of the nonexponential thermal emission Kinetics of DX centers in GaAlAs. Appl. Phys. Lett. 49 (1986) 657-659
20. Calleja E., Mooney P.M., Theis T.N., and Wright S.L. Exponential thermal emission transients from DX centers in heavily Si-doped GaAs. Appl. Phys. Lett. 56 (1990) 2102-2104
21. 1-xAs alloys. Appl. Phys. Lett. 56 (1990) 934-936
22. Chantre A., Vincent G., and Bois D. Deep-level optical spectroscopy in GaAs. Phys. Rev. B 23 (1981) 5335-5359
23. Chantre A., Kechouane M., and Bois D. Quenched-in defects in CW laser irradiated virgin silicon. Mat Res. Soc. Symp. Proc. 14 (1983) 547-551
24. Chantre A., and Bois D. Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs. Phys. Rev. B 31 (1985) 7979-7988
25. Chantre A., and Kimerling L.C. Trends in the bistable properties of iron-acceptor pairs in silicon. In: von Bardeleben H.J. (Ed). Defects in Semiconductors 10-12 (1986), Trans Tech Publications, Switzerland 387-392 Materials Science Forum
26. 1-xAs alloys. Phys. Rev. Lett. 61 (1988) 873-876
27. 1-xAs alloys. Phys. Rev. B 39 (1989) 10063-10074
28. Cheng L.J., Correlli J.C., Corbett J.W., and Watkins G.D. 1.8-, 3.3-, and 3.9-μ bands in irradiated silicon: Correlations with the divacancy. Phys. Rev. 152 (1966) 761-774
29. Chen C.S., and Correlli J.C. Infrared spectroscopy of divacancy-associated radiation-induced absorption bands in silicon. Phys. Rev. B 5 (1972) 1505-1517
30. Copeland J.A. Technique for directly plotting inverse doping profile of semiconductor wafers. IEEE Trans, on Electron Devices. ED-16 (1969) 445-449
31. x. J. Appl. Phys. 50 (1979) 6334-6343
32. DeJule R.Y., Haas M.A., Ruby D.S., and Stillman G.E. Constant capacitance DLTS circuit for measuring high purity semiconductors. Solid-State Electronics 28 (1985) 639-641
33. Dobaczewski L., Kaczor P., Hawkins I.D., and Peaker A.R. Laplace transform deep-level spectroscopic studies of defects in semiconductors. J. Appl. Phys. 76 (1994) 194-198
34. Dobaczewski L., Kaczor P., Missous M., Peaker A.R., and Zytkiewicz Z.R. Structure of the DX state formed by donors in (Al, Ga) As and Ga(As, P). J. Appl. Phys. 78 (1995) 2468-2477
35. Engström O., and Alm A. Thermodynamical analysis of optimal recombination centers in thyristors. Solid State Electronics 21 (1978) 1571-1576
36. Farmer J.W., Lamp D.C., and Meese J.M. Charge transient spectroscopy. Appl. Phys. Lett. 41 (1982) 1063-1065
37. deg;-solid solution in silicon. Inst. Phys. Conf. Ser. 46 (1979) 528-532
38. Ferenczi G., Boda J., and Pavelka T. Isothermal frequency scan DLTS. Phys. Stat. Sol. (a) 94 (1986) K119-K124
39. Garrett C.G.B., and Brattain W.H. Physical theory of semiconductor surfaces. Phys. Rev. 99 (1955) 376-387
40. Gerson J.D., Cheng L.J., and Corbett J.W. A quenched-in defect in boron-doped silicon. J. Appl. Phys. 48 (1977) 4821-4822
41. Goodman S.A., Auret F.D., and Meyer W.E. Electric field effect on the emission of electron-irradiation-induced defects in n-GaAs. Jpn. J. Appl. Phys. 33 (1994) 1949-1953
42. Graff K., and Peiper H. The properties of iron in Si. J. Electrochem Soc. 128 (1981) 669-674
43. Grimmeiss H.G. Deep levels in semiconductors. Ann. Rev. Mater. Sci. 7 (1977) 341-376
44. Grimmeiss H.G., Janzn E., and Skarstam B. Electronic properties of selenium-doped silicon. J. Appl. Phys. 51 (1980) 3740-3745
45. Hasegawa F. A new method (the three point method) of determining transient time constants and its application to DLTS. Japan. J. Appl. Phys. 24 (1985) 1356-1358
46. Hawkins I.D., and Peaker A.R. Capacitance and conductance deep level transient spectroscopy in field-effect transistors. Appl. Phys. Lett. 48 (1986) 227-229
47. Hartke J.L. The Three-dimensional Poole-Frenkel effect. J. Appl. Phys. 39 (1968) 4871-4873
48. Henry C.H., and Lang D.V. Nonradiative capture and recombination by multiphonon emission in GaAs and GaP. Phys. Rev. B 15 (1975) 989-1016
49. Heydenreich J., and Breitenstein O. Characterization of defects in semiconductors by combined application of SEM (EBIC) and SDLTS. Journal of Microscopy 141 (1986) 129-142
50. Hilibrand J., and Gold R.D. Determination of impurity distribution injunction diodes from capacitance-voltage measurements. RCA Rev. 21 (1960) 245-252
51. Hölzlein K., Pensl G., Schulz M., and Stolz P. Fast computer-controlled deep level transient spectroscopy system for versatile applications in semiconductors. Rev. Sci. Instrum. 57 (1986) 1373-1377
52. Hurtes Ch., Boulou M., Mitonneau A., and Bois D. Deep-level spectroscopy in high-resistivity materials. Appl. Phys. Lett. 32 (1978) 821-823
53. Ikeda K., Takaoka H., and Ishii Y. Photo-deep-level Fourier spectroscopy in semi-insulating bulk materials. Japan. J. Appl. Phys. 24 (1985) 1454-1458
54. Ikossi-Anastasiou K., and Roenker K.P. Refinements in the method of moments for analysis of multiexponential capacitance transients in deep-level transient spectroscopy. J. Appl. Phys. 61 (1987) 182-190
55. Johnson N.M., Bartelink D.J., Gold R.B., and Gibbons J.F. Constant-capacitance DLTS measurements of defect-density profiles in semiconductors. J. Appl. Phys. 50 (1979) 4828-4833
56. Johnson N.M. Deep level transient spectroscopy: Defect characterization in semiconductor devices. Mat. Res. Soc. Symp. Proc. 69 (1986) 75-94
57. Johnson N.M. Deep-level transient spectroscopy: Characterization and identification of electronic defects. Optical Engineering 25 (1986) 698-704
58. Johnson W.C., and Panousis T. The influence of Debye length on the C-V measurement of doping profiles. IEEE Trans. ED-18 (1971) 965-973
59. Kimerling L.C. Influence of deep traps on the measurement of free-carrier distributions in semiconductors by junction capacitance techniques. J. Appl. Phys. 45 (1974) 1839-1845
60. Kimerling L.C. Defect States in Electron-bombarded silicon: Capacitance transient analysis. In: Urli N.B., and Corbett J.W. (Eds). Radiation Effects in Semiconductors 1976 (1976), The Institute of Physics, London 221-230
61. Kimerling, L. C. and Chen, L. J. Unpublished. See data in Miller (1977).
62. Kimerling, L. C., Benton, J. L., and Rubin, J. J. (1981). Transition metal impurities. Inst. Phys. Conf. Ser., No. 59, pp. 217-222.
63. Kimerling L.C., and Benton J.L. Oxygen-related donor states in silicon. Appl. Phys. Lett 39 (1981) 410-412
64. Kimerling L.C., and Benton J.L. Electronically controlled reactions of interstitial iron in silicon. Physica 116B (1983) 297-300
65. Kirchner P.D., Schaff W.J., Maracas G.N., Eastman L.F., Chappell T.I., and Ransom C.M. The analysis of exponential and nonexponential transients in deep-level transient spectroscopy. J. Appl. Phys. 52 (1981) 6462-6470
66. Kleinhenz R., Mooney P.M., Schneider C.P., and Paz O. Defects produced in silicon and GaAs during E-beam evaporation of metals. J. Electron Mater. 14a (1985) 627-633
67. Lamp C.D., Farmer J.W., and Meese J.M. Uniaxial stress apparatus for deep level transient spectroscopy studies. Rev. Sci. Instrum. 55 (1984) 210-212
68. Landsberg P.T., and Shaban E.H. Effect of the capture coefficient in deep-level transient spectroscopy measurements. J. Appl. Phys. 61 (1987) 5055-5061
69. Lang D.V. Fast capacitance transient apparatus: Application to ZnO and centers in GaP p-n junctions. J. Appl. Phys. 45 (1974) 3014-3022
70. Lang D.V. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors. J. Appl. Phys. 45 (1974) 3023-3032
71. Lang D.V., and Henry C.H. Nonradiative recombination at deep levels in GaAs and GaP by lattice-relaxation multiphonon emission. Phys. Rev. Lett. 35 (1975) 1525-1528
72. Lang D.V. Space-charge spectroscopy in semiconductors. In: Braunlich P. (Ed). Thermally Stimulated Relaxation of Solids (1979), Springer-Verlag, Berlin 93-133
73. 1-xAs. Phys. Rev. B 19 (1979) 1015-1030
74. 111In. Appl. Phys. A 53 (1991) 95-101
75. Lannoo M., and Bourgoin J. Puinl Defects in Semiconductors I: Theoretical Aspects (1981), Springer-Verlag, Berlin
76. Lebedev A.A., and Ecke W. Determination of the density of deep levels in the bulk of a semiconductor by transient spectroscopy under constant-capacitance conditions. Sov. Phys. Semicond. 20 (1986) 1134-1137
77. Lefèvre H., and Schultz M. Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductors. Appl. Phys. 12 (1977) 45-53
78. 1-xAs. Phys. Rev. B 35 (1987) 7505-7510
79. Li G.P., and Wang K.L. Detection sensitivity and spatial resolution of reverse-bias pulsed deep-level transient spectroscopy for studying electric field-enhanced carrier emission. J. Appl. Phys. 57 (1985) 1016-1021
80. Lubberts G., and Burkey B.C. A method for calculating band profile and capacitance of nonuniformly doped Schottky barriers. Solid-State Electronics 18 (1975) 805-809
81. Ludwig G.W., and Woodbury H.H. Electron spin resonance in semiconductors. In: Seitz F., and Turnbull D. (Eds). Solid State Physics 13 (1962), Academic Press, New York 223-304
82. Maas K., Irmscher K., and Klose H. On the determination of deep level concentration profiles by DLTS measurements. Phys. Stat. Sol. (a) 91 (1985) 667-675
83. Madclung O., and Schultz M. Impurities and Defects in Group IV Elements and III-V Compounds. 22 (1989), Springer, Berlin Landolt-Börnstein, New Series, Group III, Pt. b.
84. Maguire H.G., and Marshall A. Rapid computer-controlled capacitance transient characterization of deep-level centers. IEEE Transactions on Instrumentation and Measurement IM-35 (1986) 313-317
85. Makram-Ebeid S., and Lannoo M. Quantum model for phonon-assisted tunnel ionization of deep levels in a semiconductor. Phys. Rev. B 25 (1982) 6406-6424
86. Meese J.M., Farmer J.W., and Lamp C.D. Defect symmetry from stress transient spectroscopy. Phys. Rev. Lett. 51 (1983) 1286-1289
87. Meijer E., and Grimmeiss H.G. Dynamics of capture from free-carrier tails in depletion regions and its consequences in junction experiments. J. Appl. Phys. 55 (1984) 4266-4274
88. Miller G.L. Feedback method for investigating carrier distributions in semiconductors. IEEE Trans, on Electron Devices ED-19 (1972) 1103-1108
89. Miller G.L., Lang D.V., and Kimerling L.C. Capacitance transient spectroscopy. Ann. Rev. Mater. Sci. 7 (1977) 377-448
90. Misrachi S., Peaker A.R., and Hamilton B. A high sensitivity bridge for the measurement of deep states in semiconductors. J. Phys. E 13 (1980) 1055-1061
91. Miyakawa T. Analysis of nonexponential capacitance transients in Schottky diodes 1. Memoirs of the National Defense Academy, Japan 26 (1986) 45-54
92. Mizuta M., Tachikawa M., Kukimoto H., and Minomura S. Direct evidence for the DX center being a substitutional donor in AlGaAs alloy system. Jpn. J. Appl. Phys. 24 (1985) L143-L146
93. Mooney P.M., Chen L.J., Sli M., Gerson J.D., and Corbett J.W. Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons. Phys. Rev. B 15 (1977) 3836-3843
94. Mooney P.M. Photo-deep level transient spectroscopy: A technique to study deep levels in heavily compensated semiconductors. J. Appl. Phys. 54 (1983) 208-213
95. Mooney, P. M., Calleja, E., Wright, S. L., and Heiblum, M. (1986). Effect of the Host band structure on capture and emission processes at DX centers in AlGaAs. In Defects in Semiconductors (H. J. von Bardeleben, ed.), Mat. Sci. Forum, Vols. 10-12, pp. 417-422.
96. 1-xAs. J. Appl. Phys. 62 (1987) 4786-4797
97. 1-xAs of low Al content. Appl. Phys. Lett. 53 (1988) 2546-2548
98. 1-xAs. Phys. Rev. B 37 (1988) 8298-8307
99. Mooney P.M. Deep donor levels (DX centers) in III-V semiconductors. J. Appl. Phys. 67 (1990) R1-R26
100. 1-xAs. J. Electron. Mater. 20 (1991) 23-33
101. Morimoto J., Kida T., Miki Y., and Miyakawa T. Multi-exponential analysis of DLTS. Appl. Phys. A 39 (1986) 197-202
102. Morimoto J., Kida T., and Miyakawa T. Multi-exponential analysis of DLTS by CONTIN. Mat. Res. Soc. Symp. Proc. 69 (1986) 343-348
103. Morimoto J., Fudamoto M., Tahira K., Kida T., Kato S., and Miyakawa T. Spectral analysis of deep level transient spectroscopy (SADLTS). Japan J. Appl. Phys. 26 (1987) 1634-1640
104. Nolte D.D., and Haller E.E. Optimization of the energy resolution of deep-level transient spectroscopy. J. Appl. Phys. 62 (1987) 900-906
105. Northrop G.A., and Mooney P.M. Confirmation of large lattice relaxation of the DX center by extended photo-ionization Cross-section measurements. J. Electron. Mater. 20 (1991) 13-22
106. Okumura T., and Lkoma T. New method to determine the photoionization threshold energy of a deep level from photocapacitance. Appl. Phys. Lett. 25 (1974) 572-574
107. Okushi H., and Tokumaru Y. Isothermal capacitance transient spectroscopy for determination of deep level parameters. Japan. J. Applied. Phys. 19 (1980) L335-L338
108. Omling P., Samuelson L., and Grimmeiss H.G. Deep level transient spectroscopy evaluation of nonexponential transients in semiconductor alloys. J. Appl. Phys. 54 (1983) 5117-5122
109. Pensl, G., Roos, G., Holm, C., and Wagner, P. (1986). Chalcogen double donors in silicon. In Defects in Semiconductors, (H. J. von Bardeleben, ed.), Materials Science Forum, Vols. 10-12, pp. 911-916.
110. Petersen J.W., and Neilsen J. Identification of band-gap states by deep level transient spectroscopy on radioactive probes: The case of Au and Pt in silicon. Appl. Phys. Lett. 56 (1990) 1122-1124
111. Petroff P.M., and Lang D.V. A new spectroscopic technique for imaging the spatial distribution of nonradiative defects in a scanning transmission electron microscope. Appl. Phys. Lett 31 (1977) 60-62
112. Pons D., and Makram-Ebeid S. Phonon assisted tunnel emission of electrons from deep levels in GaAs. J. de Physique 40 (1979) 1161-1172
113. Pons D., Mooney P.M., and Bourgoin J.C. Energy dependence of deep level introduction in electron irradiated GaAs. J. Appl. Phys. 51 (1980) 2038-2042
114. Pons D. Accurate determination of the free carrier capture kinetics of deep traps by space-charge methods. J. Appl. Phys. 55 (1984) 3644-3657
115. Sah C.T., Forbes L., Rosier L.L., and Tasch A.F. Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments. Solid State Electronics 13 (1970) 759-788
116. Schary A., and Lee C.A. Deep level transient spectroscopy analysis of spatially dependent doping profiles. J. Appl. Phys. 67 (1990) 200-216
117. Shiau J.-J., Fahrenbruch A.L., and Bube R.H. Interpretation of capacitance versus voltage measurements in the presence of a high density of deep levels. J. Appl. Phys. 59 (1986) 2879-2884
118. Shiau J.-J., Farenbruch A.L., and Bube R.H. A method to improve the speed and sensitivity of constant-capacitance voltage transient measurements. Solid-State Electronics 30 (1987) 513-518
119. Song L.W., Zhan X.D., Benson B.W., and Watkins G.D. Bistable interstitial-carbon-substitutional-carbon pair in silicon. Phys. Rev. B 42 (1990) 5765-5783
120. Stavola M., and Kimerling L.C. Symmetry determination for deep states in semiconductors from stress-induced dichroism of photocapacitance. J. Appl. Phys. 54 (1983) 3897-3901
121. Stievenard D., Bourgoin J.C., and Lanoo M. An easy method to determine carrier-capture cross sections: Application to GaAs. J. Appl. Phys. 55 (1984) 1477-1481
122. Stievenard D., and Vuillaume D. Profiling of defects using deep level transient spectroscopy. J. Appl. Phys. 60 (1986) 973-979
123. Su Z., and Farmer J.W. Single scan deep-level transient spectroscopy. J. Appl. Phys. 68 (1990) 4068-4070
124. Sze S.M. Physics of Semiconductor Devices (1969), Wiley, New York 403-404
125. Tachikawa M., Fujisawa T., Kukimoto H., Oomi G., and Minomura S. Observation of the persistent photoconductivity due to the DX center in GaAs under hydrostatic pressure. Jpn. J. Appl. Phys. 24 (1985) L893-L894
126. Thcis T.N., Mooney P.M., and Wright S.L. Electron localization by a metastable donor level in n-GaAs: A new mechanism limiting free carrier density. Phys. Rev. Lett. 60 (1988) 361-364
127. Theis T.N., and Mooney P.M. The DX center: Evidence for charge capture via an excited intermediate state. Mat. Res. Soc. Symp. Proc. 163 (1990) 729-740
128. Turchanikov V.I., Lysenko V.S., and Gusev V.A. Isothermal DLTS method using sampling time scanning. Phys. Stat. Sol. (a) 95 (1986) 283-289
129. Van Kooten J.J., Weller G.A., and Ammerlan C.A.J. Electron paramagnetic resonance on iron-acceptor pairs in silicon. Phys. Rev. B 30 (1984) 4564-4570
130. Van Vechten J.A., and Thurmond C.D. Entropy of ionization and temperature variation of ionization levels of defects in semiconductors. Phys. Rev. B 14 (1976) 3539-3550
131. Wang A.C., and Sah C.T. Determination of trapped charge emission rates from nonexponential capacitance transients due to high trap densities in semiconductors. J. Applied. Phys. 55 (1984) 565-570
132. Watkins G.D., and Corbett J.W. Defects in irradiated silicon: Electron spin resonance of the Si-A center. Phys. Rev. 121 (1961) 1001-1014
133. Watkins G.D., and Corbett J.W. Defects in irradiated silicon: Electron paramagnetic resonance of the divacancy. Phys. Rev. 138 (1965) A543-A555
134. Watkins G.D. Metastable defects in silicon: Hints for DX and EL2. Semicond. Sci. Techno!. 6 (1991) B111-B120
135. Yeargen J.R., and Taylor H.L. The Poole-Frenkel effect with compensation present. J. Appl. Phys. 39 (1968) 5600-5604
136. Zhan X.D., and Watkins G.D. Electron paramagnetic resonance of mullistable interstitial-carbon-substitutional-group-V-atom pairs in silicon. Phys. Rev. B 47 (1993) 6363-6380
137. Zhang S.B. Theory of local-alloy effects on DX centers. Phys. Rev. B 44 (1991) 3417-3419