Nickel segregation on dislocation loops in implanted silicon

Scripta Materialia

Volumn 64, Issue 5, 2011, Pages 378-381

  Hoummada, Khalid ^a   Mangelinck, Dominique ^a   Gault, Baptiste ^b,c   Cabié, Martiane ^a  

^a AIX MARSEILLE UNIVERSITY   (France)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c UNIVERSITY OF SYDNEY   (Australia)

Author keywords

Atom Probe Tomography; Dislocation; Implantation; Ni in silicon; Segregation

Indexed keywords

ATOMS; DISLOCATIONS (CRYSTALS); HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION IMPLANTATION; NICKEL; PROBES; SEGREGATION (METALLOGRAPHY); TRANSMISSION ELECTRON MICROSCOPY;

ATOM PROBE TOMOGRAPHY; CRYSTALLOGRAPHIC INFORMATION; DISLOCATION LOOP; SI WAFER;

SILICON WAFERS;

EID: 78650690452     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2010.10.036     Document Type: Article

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