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Volumn 85, Issue 10, 2008, Pages 1995-1999

Atom probe tomography of Ni silicides: First stages of reaction and redistribution of Pt

Author keywords

Atom probe field ion microscopy; Interface migration; Interface segregation; Thin films; Transition metal silicides

Indexed keywords

ATOM LASERS; ATOMS; BINARY ALLOYS; DEPOSITION; HEAT TREATMENT; INTERFACES (MATERIALS); LASER PULSES; NICKEL; PROBES; SEGREGATION (METALLOGRAPHY); SILICIDES; THIN FILMS; TRANSITION METAL COMPOUNDS;

EID: 52349113446     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.04.048     Document Type: Article
Times cited : (15)

References (40)
  • 8
    • 52349101156 scopus 로고    scopus 로고
    • M.K. Miller, A. Cerezo, M.G. Hetherington, G.D.W. Smith, Atom Probe Field Ion Microscopy, Oxford, 2005.
    • M.K. Miller, A. Cerezo, M.G. Hetherington, G.D.W. Smith, Atom Probe Field Ion Microscopy, Oxford, 2005.
  • 39
    • 52349091838 scopus 로고    scopus 로고
    • G. Ottaviani, J.W. Mayer, in: M.J. Howes, D.V. Morgan (Eds.), Reliability and Degradation Semiconductor Devices and Circuit.
    • G. Ottaviani, J.W. Mayer, in: M.J. Howes, D.V. Morgan (Eds.), Reliability and Degradation Semiconductor Devices and Circuit.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.