Atom probe tomography of Ni silicides: First stages of reaction and redistribution of Pt

Microelectronic Engineering

Volumn 85, Issue 10, 2008, Pages 1995-1999

  Mangelinck, D ^a   Hoummada, K ^a   Cojocaru Miredin O ^b   Cadel, E ^b   Perrin Pellegrino, C ^a   Blavette, D ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b UFR Sciences et Techniques Avenue de l'Université   (France)

Author keywords

Atom probe field ion microscopy; Interface migration; Interface segregation; Thin films; Transition metal silicides

Indexed keywords

ATOM LASERS; ATOMS; BINARY ALLOYS; DEPOSITION; HEAT TREATMENT; INTERFACES (MATERIALS); LASER PULSES; NICKEL; PROBES; SEGREGATION (METALLOGRAPHY); SILICIDES; THIN FILMS; TRANSITION METAL COMPOUNDS;

AFTER-HEAT TREATMENT; ATOM PROBE FIELD-ION MICROSCOPIES; ATOM PROBE TOMOGRAPHY; CONSTANT THICKNESS; INTERFACE MIGRATION; INTERFACE SEGREGATION; INTERFACIAL SEGREGATION; TRANSITION METAL SILICIDES;

PLATINUM;

EID: 52349113446     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.04.048     Document Type: Article

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