Glitch-induced within-die variations of dynamic energy in voltage-scaled nano-CMOS circuits

ESSCIRC 2010 - 36th European Solid State Circuits Conference

Volumn , Issue , 2010, Pages 518-521

  Kamel, Dina ^a   Hocquet, Cédric ^a   Standaert, François Xavier ^a   Flandre, Denis ^a   Bol, David ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVITY FACTOR; DELAY VARIABILITY; DYNAMIC ENERGY; DYNAMIC POWER; LEAKAGE POWER; LOGIC PATH; LOW POWER APPLICATION; NANO CMOS; NANOMETER CMOS; ON DYNAMICS; VOLTAGE-SCALING; WITHIN DIES; WITHIN-DIE VARIATIONS;

CMOS INTEGRATED CIRCUITS; DIES; DIGITAL INTEGRATED CIRCUITS; ENERGY UTILIZATION; LEAKAGE CURRENTS; SWITCHING CIRCUITS;

LOGIC CIRCUITS;

EID: 78650403400     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIRC.2010.5619757     Document Type: Conference Paper

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