Charge transport in imperfect organic field effect transistors: Effects of explicit defects and electrostatics

Journal of Physical Chemistry C

Volumn 114, Issue 48, 2010, Pages 20417-20423

  Hanwell, Marcus D ^a   Madison, Tamika A ^a   Hutchison, Geoffrey R ^a  

^a UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER-CONCENTRATION DEPENDENCE; CHARGE TRANSPORT; CHARGED DEFECTS; DEFECT LEVELS; DEFECT SITES; DEFECT-FREE; ELECTROSTATIC INTERACTIONS; FIRST-PRINCIPLES; GAUSSIANS; MONTE CARLO SIMULATION; NEGATIVE DIFFERENTIAL RESISTANCES; NEUTRAL DEFECTS; QUANTUM CHEMISTRY CALCULATIONS; SWITCH-ON;

CARRIER CONCENTRATION; COMPUTER SIMULATION; DEFECTS; DISSOCIATION; ELECTROSTATIC DEVICES; ELECTROSTATICS; MONTE CARLO METHODS; ORGANIC FIELD EFFECT TRANSISTORS; POISSON DISTRIBUTION; QUANTUM CHEMISTRY;

FIELD EFFECT TRANSISTORS;

EID: 78650168222     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp104416a     Document Type: Article

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