Arbitrary density of states in an organic thin-film field-effect transistor model and application to pentacene devices

IEEE Transactions on Electron Devices

Volumn 54, Issue 1, 2007, Pages 17-25

  Oberhoff, Daniel ^a,b   Pernstich, Kurt P ^a   Gundlach, David J ^a,c   Batlogg, Bertram ^a  

^a ETH ZURICH   (Switzerland)

^b FRAUNHOFER INSTITUTE FOR APPLIED INFORMATION TECHNOLOGY FIT   (Germany)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Density of states; FET; Modeling; Organic semiconductor; Pentacene; Thin film transistor

Indexed keywords

ELECTRIC CHARGE; ELECTRONIC DENSITY OF STATES; MATHEMATICAL MODELS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

GATE INSULATOR; SURFACE CHARGE DENSITY; THIN-FILM FIELD-EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 33846043883     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.887200     Document Type: Article

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