메뉴 건너뛰기




Volumn 98, Issue 9, 2007, Pages

Effect of interfacial shallow traps on polaron transport at the surface of organic semiconductors

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRON MOBILITY; ELECTRON TRAPS; FIELD EFFECT TRANSISTORS; HOLE TRAPS; SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 33847685582     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.98.096402     Document Type: Article
Times cited : (77)

References (22)
  • 3
    • 19544383048 scopus 로고    scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.93.086602
    • V. Podzorov, Phys. Rev. Lett. 93, 086602 (2004). PRLTAO 0031-9007 10.1103/PhysRevLett.93.086602
    • (2004) Phys. Rev. Lett. , vol.93 , pp. 086602
    • Podzorov, V.1
  • 6
    • 1142304505 scopus 로고    scopus 로고
    • JAPIAU 0021-8979 10.1063/1.1631079
    • R.W.I. de Boer, J. Appl. Phys. 95, 1196 (2004); JAPIAU 0021-8979 10.1063/1.1631079
    • (2004) J. Appl. Phys. , vol.95 , pp. 1196
    • De Boer, R.W.I.1
  • 12
    • 33645502724 scopus 로고    scopus 로고
    • JAPIAU 0021-8979 10.1063/1.2170421
    • C. Goldmann, J. Appl. Phys. 99, 034507 (2006). JAPIAU 0021-8979 10.1063/1.2170421
    • (2006) J. Appl. Phys. , vol.99 , pp. 034507
    • Goldmann, C.1
  • 13
    • 27144461207 scopus 로고    scopus 로고
    • JAPIAU 0021-8979 10.1063/1.2081109
    • I. Torres and D.M. Taylor, J. Appl. Phys. 98, 073710 (2005). JAPIAU 0021-8979 10.1063/1.2081109
    • (2005) J. Appl. Phys. , vol.98 , pp. 073710
    • Torres, I.1    D.M. Taylor2
  • 14
    • 27144518763 scopus 로고    scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.95.016602
    • V. Podzorov and M.E. Gershenson, Phys. Rev. Lett. 95, 016602 (2005). PRLTAO 0031-9007 10.1103/PhysRevLett.95.016602
    • (2005) Phys. Rev. Lett. , vol.95 , pp. 016602
    • Podzorov, V.1    M.E. Gershenson2
  • 15
    • 4143078056 scopus 로고    scopus 로고
    • JMREEE 0884-2914 10.1557/JMR.2004.0266
    • G. Horowitz, J. Mater. Res. 19, 1946 (2004). JMREEE 0884-2914 10.1557/JMR.2004.0266
    • (2004) J. Mater. Res. , vol.19 , pp. 1946
    • Horowitz, G.1
  • 16
    • 0242666862 scopus 로고    scopus 로고
    • We used OFETs with very long channels (L=6-8mm) and graphite contacts, which results in devices that are not contact-limited at 200-300 K. This was confirmed by measuring μ(VSD) dependences at each T: the apparent mobility was found to be independent of the source-drain voltage for VSD>5V,-an indication that the transport is not dominated by the contact resistance [APPLAB 0003-6951 10.1063/1.1622799
    • We used OFETs with very long channels (L=6-8mm) and graphite contacts, which results in devices that are not contact-limited at 200-300 K. This was confirmed by measuring μ(VSD) dependences at each T: the apparent mobility was found to be independent of the source-drain voltage for VSD>5V,-an indication that the transport is not dominated by the contact resistance [V. Podzorov, Appl. Phys. Lett. 83, 3504 (2003)]. In addition, all of the data points in Fig. 3 have been obtained from the linear portions of ISD(Vg) recorded at stabilized T. APPLAB 0003-6951 10.1063/1.1622799
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 3504
    • Podzorov, V.1
  • 19
    • 33749497060 scopus 로고    scopus 로고
    • APCPCS 0094-243X 10.1063/1.1994497
    • K. Hannewald and P.A. Bobbert, AIP Conf. Proc. 772, 1101 (2005). APCPCS 0094-243X 10.1063/1.1994497
    • (2005) AIP Conf. Proc. , vol.772 , pp. 1101
    • Hannewald, K.1    P.A. Bobbert2
  • 20
    • 33644670563 scopus 로고    scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.96.086601
    • A. Troisi and G. Orlandi, Phys. Rev. Lett. 96, 086601 (2006). PRLTAO 0031-9007 10.1103/PhysRevLett.96.086601
    • (2006) Phys. Rev. Lett. , vol.96 , pp. 086601
    • Troisi, A.1    Orlandi, G.2
  • 21
    • 0942277847 scopus 로고    scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.91.256403
    • S. Fratini and S. Ciuchi, Phys. Rev. Lett. 91, 256403 (2003). PRLTAO 0031-9007 10.1103/PhysRevLett.91.256403
    • (2003) Phys. Rev. Lett. , vol.91 , pp. 256403
    • Fratini, S.1    Ciuchi, S.2
  • 22
    • 9644302981 scopus 로고    scopus 로고
    • JACSAT 0002-7863 10.1021/ja045587m
    • H. Moon, J. Am. Chem. Soc. 126, 15322 (2004). JACSAT 0002-7863 10.1021/ja045587m
    • (2004) J. Am. Chem. Soc. , vol.126 , pp. 15322
    • Moon, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.