Extracting parameters from the current-voltage characteristics of polycrystalline octithiophene thin film field-effect transistors

EPJ Applied Physics

Volumn 39, Issue 1, 2007, Pages 7-16

  Bourguiga, R ^a   Mahdouani, M ^a   Mansouri, S ^a   Horowitz, G ^b  

^a University of Carthage   (Tunisia)

^b UNIVERSITÉ PARIS DIDEROT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; CURRENT VOLTAGE CHARACTERISTICS; POLYCRYSTALLINE MATERIALS; THIN FILMS; THRESHOLD VOLTAGE;

DENSITY OF TRAPS; GATE VOLTAGE; POLYCRYSTALLINE (8T) TRANSISTORS; POLYCRYSTALLINE OCTITHIOPHENE (8T);

FIELD EFFECT TRANSISTORS;

EID: 34547427004     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap:2007101     Document Type: Article

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