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International Journal of Nanoscience

Volumn 9, Issue 4, 2010, Pages 251-255

Influence of room humidity on the formation of nanoscale silicon oxide patterned by AFM lithography

(3) Abdullah, A Makarimi a,b Hutagalung, Sabar D a Lockman, Zainovia a

a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING (Malaysia)

b Advance Material Research Center SIRIM Berhad (Malaysia)

Author keywords

AFM lithography; humidity; nanopatterns; silicon oxide; silicon on insulator (SOI)

Indexed keywords

AFM; AFM LITHOGRAPHY; AFM NANOLITHOGRAPHY; ATOMIC FORCE MICROSCOPES; CONDUCTIVE AFM; EXPOSURE-TIME; HUMIDITY; LITHOGRAPHY PROCESS; LOCAL ANODIC OXIDATION; NANO PATTERN; NANO SCALE; NANO-METER-SCALE; NANOELECTRONIC DEVICES; NEGATIVE VOLTAGE; OXIDE GROWTH; OXIDE PATTERNS; RELATIVE HUMIDITIES; SCANNING SPEED; SILICON LAYER; SILICON OXIDE MASKS; SILICON-ON-INSULATOR (SOI); SURROUNDING ENVIRONMENT; TOPOGRAPHIC ANALYSIS;

ANODIC OXIDATION; ATMOSPHERIC HUMIDITY; FABRICATION; NANOELECTRONICS; NANOSTRUCTURED MATERIALS; SILICON COMPOUNDS; SILICON OXIDES;

LITHOGRAPHY;

EID: 78650156313 PISSN: 0219581X EISSN: None Source Type: Journal
DOI: 10.1142/S0219581X10006752 Document Type: Conference Paper

Times cited : (4)

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