Room temperature operated single electron transistor made by STM/AFM nano-oxidation process

Physica B: Condensed Matter

Volumn 227, Issue 1-4, 1996, Pages 92-94

  Matsumoto, Kazuhiko ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

AFM; SET; STM

Indexed keywords

ATOMIC FORCE MICROSCOPY; CALCULATIONS; ELECTRIC PROPERTIES; EXPERIMENTS; SCANNING TUNNELING MICROSCOPY; TEMPERATURE;

NANO-OXIDATION PROCESS; ROOM TEMPERATURE; SINGLE ELECTRON TRANSISTOR;

TRANSISTORS;

EID: 0030233375     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(96)00359-6     Document Type: Article

References (4)

1. K. Matsumoto, S. Takahashi, M. Ishii, M. Hoshi, A. Kurokawa, S. Ichimura and A. Ando, Jpn. J. Appl. Phys. 34 (1995) 1387.
2. H. Sugimura, T. Uchida, N. Kitamura and H. Masuhara, Jpn. J. Appl. Phys. 32 (1993) L553.
3. K. Matsumoto, M. Ishii, J. Shirakashi, K. Segawa, Y. Oka, B.J. Vartanian and J.S. Harris, Technical Digest of International Electron Device Meeting (1995) 363.
4. H. Grabert and M.H. Devoret, Single Charge Tunneling (Plenum, New York, 1992) p. 80.