New approach to local anodic oxidation of semiconductor heterostructures

Ultramicroscopy

Volumn 108, Issue 10, 2008, Pages 1086-1089

  Martaus, Jozef ^a   Gregušová, Dagmar ^a   Cambel, Vladimír ^a   Kúdela, Robert ^a   Šoltýs, Ján ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

Heterostructures; Nano oxidation; Nano scale pattern formation

Indexed keywords

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; CHEMICAL OXYGEN DEMAND; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRON GAS; ETCHING; GALLIUM ALLOYS; IMAGING TECHNIQUES; MICROSCOPIC EXAMINATION; MOS CAPACITORS; OXIDATION; SCANNING PROBE MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SURFACES; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS; WET ETCHING;

BARRIER MATERIALS; CA-P LAYER; DOPING LAYERS; HETEROSTRUCTURES; HIGH TEMPERATURES; HIGH-ENERGY BARRIERS; LOCAL ANODIC OXIDATION; LOWER DENSITY; NANO-DEVICES; NANO-OXIDATION; NANO-SCALE PATTERN FORMATION; NEW APPROACHES; ORDER-OF MAGNITUDES; REMOTE SI; SEMICONDUCTOR HETEROSTRUCTURES; SURFACE STATES;

HETEROJUNCTIONS;

ALUMINUM; ARSENIC; GALLIUM; INDIUM; NANOMATERIAL; PHOSPHORUS; SILICON;

ARTICLE; ATOMIC FORCE MICROSCOPY; MATERIALS TESTING; SEMICONDUCTOR;

EID: 49949099848     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2008.04.053     Document Type: Article

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