Effects of humidity on nano-oxidation of silicon nitride thin film

Ultramicroscopy

Volumn 108, Issue 10, 2008, Pages 1076-1080

  Hsu, Hsun Feng ^a   Lee, Chien Wei ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Atomic force microscopy; Humidity; Kinetics; Oxidation; Silicon nitride

Indexed keywords

CHEMICAL OXYGEN DEMAND; CONCENTRATION (PROCESS); ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; METEOROLOGY; MOISTURE; NITRIDES; NONMETALS; OXIDATION; SILICON; SILICON NITRIDE; SILICONES; SURFACE DIFFUSION; THICK FILMS; THIN FILM DEVICES; THIN FILMS;

ATOMIC FORCE MICROSCOPE; ATOMIC FORCE MICROSCOPY; CONTACT MODES; H IGH CONCENTRATIONS; HUMIDITY; INITIAL OXIDATION; KINETICS; LOGARITHMIC RELATIONSHIP; NANO-METER SCALE; NANO-OXIDATION; OXIDATION TIME; OXIDE SURFACES; OXYANIONS; RELATIVE HUMIDITY; TIP APEX;

ATMOSPHERIC HUMIDITY;

OXIDE; SILICON NITRIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; HUMIDITY; OXIDATION;

EID: 49949089670     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2008.04.025     Document Type: Article

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