Statistical representation of intrinsic electronic tunneling characteristics through alkyl self-assembled monolayers in nanowell device structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 3, 2008, Pages 904-908

  Song, Hyunwook ^a   Lee, Takhee ^a   Choi, Nak Jin ^b   Lee, Hyoyoung ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMPTOTIC STABILITY; CHARGE TRANSFER; ELECTRON TUNNELING; MOLECULAR ELECTRONICS; SELF ASSEMBLED MONOLAYERS; STATISTICAL METHODS;

DEVICE STRUCTURES; NANOWELLS; STATISTICAL REPRESENTATION;

NANOSTRUCTURES;

EID: 44649162399     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2905237     Document Type: Article

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