Electrostatically defined quantum dots in a Si/SiGe heterostructure

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Wild, A ^a   Sailer, J ^a   Nutzel J ^a   Abstreiter, G ^a   Ludwig, S ^c   Bougeard, D ^a,b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b UNIVERSITY OF REGENSBURG   (Germany)

^c UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE NOISE; DOUBLE QUANTUM DOTS; ELECTRON MASS; EPITAXIALLY GROWN; HETEROSTRUCTURES; LARGE EFFECTIVE; QUANTUM DOT; SI/SIGE; SILICON-BASED; SPIN QUBIT; STABLE OPERATION; STRAIN ENGINEERING; TECHNOLOGICAL CHALLENGES; TUNABILITIES;

OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS; TRANSPORT PROPERTIES;

HETEROJUNCTIONS;

EID: 78650089656     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/12/11/113019     Document Type: Article

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