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Volumn 95, Issue 20, 2009, Pages

Charge sensing in enhancement mode double-top-gated metal-oxide- semiconductor quantum dots

(13) Nordberg, E P a,b Stalford, H L a,c Young, R a Ten Eyck, G A a Eng, K a Tracy, L A a Childs, K D a Wendt, J R a Grubbs, R K a Stevens, J a Lilly, M P a Eriksson, M A b Carroll, M S a

a SANDIA NATIONAL LABORATORIES (United States)

b UNIVERSITY OF WISCONSIN MADISON (United States)

c UNIVERSITY OF OKLAHOMA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MODEL; CHARGE SENSING; CHARGE SENSORS; COUPLING CAPACITANCE; ENHANCEMENT MODES; INTEGRATED SENSORS; METAL OXIDE SEMICONDUCTOR; QUANTUM DOT;

CAPACITANCE; DIELECTRIC DEVICES; MICROELECTROMECHANICAL DEVICES; OPTICAL WAVEGUIDES; SENSORS; THREE DIMENSIONAL;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70450239745 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3259416 Document Type: Article

Times cited : (31)

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