Effect of heavy ion implantation on self-assembled single layer InAs/GaAs quantum dots

Journal of Physics D: Applied Physics

Volumn 43, Issue 50, 2010, Pages

  Sreekumar, R ^a   Mandal, A ^a   Chakrabarti, S ^a   Gupta, S K ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b BHABHA ATOMIC RESEARCH CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; BLUE SHIFT; CAP LAYERS; COMPRESSIVE STRAIN; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; CRYSTALLINE QUALITY; DAMAGE ZONES; DEFECT CLUSTER; FLUENCES; GAAS; HETEROSTRUCTURES; IMPLANTATION ENERGIES; INAS/GAAS; INAS/GAAS QUANTUM DOTS; NON-RADIATIVE RECOMBINATIONS; PHOTOLUMINESCENCE EFFICIENCY; PHOTOLUMINESCENCE EMISSION; QUANTUM DOTS; SELF-ASSEMBLED; SINGLE LAYER; SULFUR IMPLANTATION; SULFUR IONS;

ACTIVATION ENERGY; DEFECT DENSITY; DEFECTS; DEGRADATION; GALLIUM ALLOYS; GALLIUM ARSENIDE; ION IMPLANTATION; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SULFUR; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ENERGY EFFICIENCY;

EID: 78650084475     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/50/505302     Document Type: Article

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